
BAT1704WH6327XTSA1
ActiveInfineon Technologies
DIODE, SCHOTTKY, 4V, 0.13A, SOT-323
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BAT1704WH6327XTSA1
ActiveInfineon Technologies
DIODE, SCHOTTKY, 4V, 0.13A, SOT-323
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | BAT1704WH6327XTSA1 |
|---|---|
| Capacitance @ Vr, F | 0.75 pF |
| Current - Max [Max] | 130 mA |
| Diode Type | Schottky - 1 Pair Series Connection |
| Operating Temperature | 150 °C |
| Package / Case | SC-70, SOT-323 |
| Power Dissipation (Max) [Max] | 150 mW |
| Resistance @ If, F | 15 Ohm |
| Supplier Device Package | PG-SOT323 |
| Voltage - Peak Reverse (Max) [Max] | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BAT1704 Series
These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector applications at frequencies as high as 6 GHz.
Documents
Technical documentation and resources