Specification	SIR410DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	41 nC
Input Capacitance (Ciss) (Max)	1600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	4.2 W, 36 W
Rds On (Max)	4.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SIR410 Series

Part	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	FET Type	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Package / Case	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Vgs(th) (Max)	Vgs (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name
Vishay Dale SIR410DP-T1-GE3	35 A	4.2 W 36 W	1600 pF	N-Channel	41 nC	20 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	-55 °C	150 °C	4.8 mOhm	2.5 V	20 V	Surface Mount	10 V	4.5 V	PowerPAK® SO-8

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