Specification	SIHD180N60E-GE3

Current - Continuous Drain (Id) (Tc)	19 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	32 nC
Input Capacitance (Ciss) (Max)	1080 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Power Dissipation (Max)	156 W
Rds On (Max)	195 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

SIHD180 Series

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package Name	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Technology	Rds On (Max)	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Vishay Dale SIHD180N60E-GE3	N-Channel	10 V	Surface Mount	DPak	19 A	32 nC	1080 pF	5 V	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	195 mOhm	30 V	156 W	600 V

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