LSIC2SD120N80PA

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IXYS

DIODE MOD SIC 1200V 75A SOT227B

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IXYS

DIODE MOD SIC 1200V 75A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	LSIC2SD120N80PA

Current - Average Rectified (Io) (per Diode)	75 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	SOT-227B - miniBLOC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Technology	Supplier Device Package	Diode Configuration	Package / Case	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Speed	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
IXYS LSIC2SD120N80PA	SiC (Silicon Carbide) Schottky	SOT-227B - miniBLOC	2 Independent	SOT-227-4 miniBLOC	1.8 V	Chassis Mount	1.2 kV	0 ns	100 µA	No Recovery Time	75 A	175 ░C	-55 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 1200 V 75A (DC) Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources

No documents available