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RN2901 - Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/4.7 kΩ, SOT-363(US6)

SSM6N44FU,LF

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Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-363(US6)

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RN2901 - Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/4.7 kΩ, SOT-363(US6)

SSM6N44FU,LF

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-363(US6)

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Description

General part information

SSM6N44FU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-363(US6)

Technical Specifications

Parameters and characteristics for this part

SpecificationSSM6N44FU,LF
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id) (Ta)100 mA
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max)8.5 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-TSSOP, SC-88, SOT-363
Package NameUS6
Power - Max (Ta)200 mW
Rds On (Max)4 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1.5 V

Pricing

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CAD

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