Description
General part information
IPBE65 Series
The 50mOhm IPBE65R050CFD7A in D2PAK 7-pin package is part of the automotive-qualified 650V CoolMOS™ SJ powerMOSFET CFD7Aproduct family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. When using Infineon’s650 V CoolMOS™ CFD7A technologyin combination with the D2PAK 7-pin package, customers benefit from enhanced efficiency and thermal behavior. The Kelvin-source concept used in the D2PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at system level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2mm between drain and source/gate facilitates device usage for higher battery voltage classes up to 475V.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPBE65R050CFD7AATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 45 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 102 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 4975 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | D2PAK (6 Leads + Tab), TO-263CB, TO-263-7 |
| Package Name | PG-TO263-7-3-10 |
| Power Dissipation (Max) | 227 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 50 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
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