Specification	MSCSM120AM31TBL1NG

Channel Count	2
Configuration	N Channel
Configuration - Features	Phase Leg
Current - Continuous Drain (Id)	79 A
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Max)	232 nC
Input Capacitance (Ciss) (Max)	3020 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	Module
Power - Max	310 W
Rds On (Max)	31 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max)	2.8 V

MSCSM120 Series

1200V, 12.5 mOhm, BL3, Double Dual Common Source Baseplate-less mSiC™ MOSFET Module

Part	Input Capacitance (Ciss) (Max)	Technology	Power - Max (Tc)	Channel Count	Configuration - Features	Configuration	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Vgs(th) (Max)	Package Name	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Operating Temperature (Max)	Operating Temperature (Min)	Power - Max	Current - Continuous Drain (Id)
Microchip Technology MSCSM120AM027CT6AG	27000 pF	Silicon Carbide (SiC)	2.97 kW	2	Phase Leg	N Channel	Chassis Mount	1200 V	3.5 mOhm	2.8 V	SP6C	2088 nC	733 A	Module	175 °C	-40 °C
Microchip Technology MSCSM120AM11T3AG	9060 pF	Silicon Carbide (SiC)	1.067 kW 1067 W	2	Phase Leg	N Channel	Chassis Mount	1200 V	10.4 mOhm	2.8 V		696 nC	254 A	Module	175 °C	-40 °C
Microchip Technology MSCSM120DDUM16TBL3NG	6040 pF	Silicon Carbide (SiC)		4		Common Source N-Channel	Chassis Mount	1200 V	16 mOhm	2.8 V		464 nC		Module	175 °C	-55 °C	560 W	150 A 150 A
Microchip Technology MSCSM120VR1M31C1AG	3020 pF	Silicon Carbide (SiC)	395 W	2	Phase Leg	N Channel	Chassis Mount	1200 V	31 mOhm	2.8 V		232 nC	89 A	Module	175 °C	-40 °C
Microchip Technology MSCSM120DUM31TBL1NG	3020 pF	Silicon Carbide (SiC)		2	Dual	N-Channel	Chassis Mount	1200 V	31 mOhm	2.8 V		232 nC		Module	175 °C	-55 °C	310 W	79 A
Microchip Technology MSCSM120AM027D3AG	27000 pF	Silicon Carbide (SiC)	2.97 kW	2	Phase Leg	N Channel	Chassis Mount	1200 V	3.5 mOhm	2.8 V		2088 nC	733 A	Module	175 °C	-40 °C
Microchip Technology MSCSM120DHM31CTBL2NG	3020 pF	Silicon Carbide (SiC)		2	Dual	Asymmetrical N-Channel	Chassis Mount	1200 V	31 mOhm	2.8 V		232 nC		Module	175 °C	-55 °C	310 W	79 A
Microchip Technology MSCSM120AM02CT6LIAG	36240 pF 36240 pF	Silicon Carbide (SiC)	3.75 kW	2	Phase Leg	N Channel	Chassis Mount	1200 V	2.6 mOhm	2.8 V	SP6C LI	2784 nC	947 A	Module	175 °C	-40 °C
Microchip Technology MSCSM120AM31CTBL1NG	3020 pF	Silicon Carbide (SiC)		2	Phase Leg	N Channel	Chassis Mount	1200 V	31 mOhm	2.8 V		232 nC		Module	175 °C	-55 °C	310 W	79 A
Microchip Technology MSCSM120AM042D3AG	18100 pF 18100 pF	Silicon Carbide (SiC)	2.031 kW 2031 W	2	Phase Leg	N Channel	Chassis Mount	1200 V	5.2 mOhm 5.2 mOhm	2.8 V		1392 nC	495 A	Module	175 °C	-40 °C

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Using NTC Temperature Sensors Integrated into Power Modules

MSCSM120AM31TBL1NG Phase leg SiC MOSFET Power Module

Mounting Instructions for Baseplate-less Power Modules

Driving mSiC™ MOSFETs

MSCSM120AM31TBL1NG | Datasheet