MSCSM120 Series

1200V, 12.5 mOhm, BL3, Double Dual Common Source Baseplate-less mSiC™ MOSFET Module

Catalog

1200V, 12.5 mOhm, BL3, Double Dual Common Source Baseplate-less mSiC™ MOSFET Module

Part	Input Capacitance (Ciss) (Max)	Technology	Power - Max (Tc)	Channel Count	Configuration - Features	Configuration	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Vgs(th) (Max)	Package Name	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Operating Temperature (Max)	Operating Temperature (Min)	Power - Max	Current - Continuous Drain (Id)
Microchip Technology MSCSM120AM027CT6AG	27000 pF	Silicon Carbide (SiC)	2.97 kW	2	Phase Leg	N Channel	Chassis Mount	1200 V	3.5 mOhm	2.8 V	SP6C	2088 nC	733 A	Module	175 °C	-40 °C
Microchip Technology MSCSM120AM11T3AG	9060 pF	Silicon Carbide (SiC)	1.067 kW 1067 W	2	Phase Leg	N Channel	Chassis Mount	1200 V	10.4 mOhm	2.8 V		696 nC	254 A	Module	175 °C	-40 °C
Microchip Technology MSCSM120DDUM16TBL3NG	6040 pF	Silicon Carbide (SiC)		4		Common Source N-Channel	Chassis Mount	1200 V	16 mOhm	2.8 V		464 nC		Module	175 °C	-55 °C	560 W	150 A 150 A
Microchip Technology MSCSM120VR1M31C1AG	3020 pF	Silicon Carbide (SiC)	395 W	2	Phase Leg	N Channel	Chassis Mount	1200 V	31 mOhm	2.8 V		232 nC	89 A	Module	175 °C	-40 °C
Microchip Technology MSCSM120DUM31TBL1NG	3020 pF	Silicon Carbide (SiC)		2	Dual	N-Channel	Chassis Mount	1200 V	31 mOhm	2.8 V		232 nC		Module	175 °C	-55 °C	310 W	79 A
Microchip Technology MSCSM120AM027D3AG	27000 pF	Silicon Carbide (SiC)	2.97 kW	2	Phase Leg	N Channel	Chassis Mount	1200 V	3.5 mOhm	2.8 V		2088 nC	733 A	Module	175 °C	-40 °C
Microchip Technology MSCSM120DHM31CTBL2NG	3020 pF	Silicon Carbide (SiC)		2	Dual	Asymmetrical N-Channel	Chassis Mount	1200 V	31 mOhm	2.8 V		232 nC		Module	175 °C	-55 °C	310 W	79 A
Microchip Technology MSCSM120AM02CT6LIAG	36240 pF 36240 pF	Silicon Carbide (SiC)	3.75 kW	2	Phase Leg	N Channel	Chassis Mount	1200 V	2.6 mOhm	2.8 V	SP6C LI	2784 nC	947 A	Module	175 °C	-40 °C
Microchip Technology MSCSM120AM31CTBL1NG	3020 pF	Silicon Carbide (SiC)		2	Phase Leg	N Channel	Chassis Mount	1200 V	31 mOhm	2.8 V		232 nC		Module	175 °C	-55 °C	310 W	79 A
Microchip Technology MSCSM120AM042D3AG	18100 pF 18100 pF	Silicon Carbide (SiC)	2.031 kW 2031 W	2	Phase Leg	N Channel	Chassis Mount	1200 V	5.2 mOhm 5.2 mOhm	2.8 V		1392 nC	495 A	Module	175 °C	-40 °C

Catalog

1200V, 12.5 mOhm, BL3, Double Dual Common Source Baseplate-less mSiC™ MOSFET Module

Description

• SiC Power MOSFET - Low RDS(on) - High-temperature performance • Kelvin source for easy drive • Low stray inductance • Internal thermistor for temperature monitoring (optional) • High-efficiency converter • Outstanding performance at high-frequency operation • Stable temperature behavior • Direct mounting to the heatsink (isolated package) • Low junction to case thermal resistance • RoHS Compliant