IXFK36N60

Obsolete

IXYS

MOSFET N-CH 600V 36A TO264AA

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Obsolete

IXYS

MOSFET N-CH 600V 36A TO264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK36N60

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	325 nC
Input Capacitance (Ciss) (Max) @ Vds	9000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology
IXYS IXFK36N60	TO-264-3 TO-264AA	9000 pF	600 V	TO-264AA (IXFK)	180 mOhm	N-Channel	20 V	325 nC	10 V	500 W	-55 °C	150 °C	Through Hole	4.5 V	36 A	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 36A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources

No documents available