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STL33N60M2 - 8 Power VDFN

STL33N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.115 OHM TYP., 22 A MDMESH M2 POWER MOSFET IN A POWERFLAT 8X8 HV PACKAGE

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STL33N60M2 - 8 Power VDFN

STL33N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.115 OHM TYP., 22 A MDMESH M2 POWER MOSFET IN A POWERFLAT 8X8 HV PACKAGE

Deep-Dive with AI

Documents+24

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL33N60M2
Current - Continuous Drain (Id) @ 25°C22 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1700 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]190 W
Rds On (Max) @ Id, Vgs135 mOhm
Supplier Device PackagePowerFlat™ (8x8) HV
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.84
Digi-Reel® 1$ 3.84
Tape & Reel (TR) 3000$ 1.87

Description

General part information

STL33N60M2 Series

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.