2N1131L

Obsolete

Microchip Technology

POWER BJT TO-5 ROHS COMPLIANT: YES

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2N1131L

Obsolete

Microchip Technology

POWER BJT TO-5 ROHS COMPLIANT: YES

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

2N1131L-Transistor Series

This specification covers the performance requirements for PNP silicon low-power, 2N1131, 2N1131L, 2N1132 and 2N1132L transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/177.

Technical Specifications

Parameters and characteristics for this part

Specification	2N1131L

Current - Collector (Ic) (Max)	0.6 mA
Current - Collector Cutoff (Max)	10 mA
DC Current Gain (hFE) (Min)	20
Mounting Type	Through Hole
Operating Temperature (Max)	200 °C
Operating Temperature (Min)	-65 °C
Package / Case	TO-5-3 Metal Can, TO-205AA
Package Name	TO-5AA
Power - Max	0.6 W
Transistor Type	PNP
Vce Saturation (Max)	1.3 V
Voltage - Collector Emitter Breakdown (Max)	40 V

2N1131L-Transistor Series

PNP Silicon Low-Power -40V, -0.6A

Part	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min)	Package Name	Transistor Type	Mounting Type	Package / Case	Power - Max	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max)	Current - Collector (Ic) (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Microchip Technology 2N1131L	10 mA	20	TO-5AA	PNP	Through Hole	TO-205AA TO-5-3 Metal Can	0.6 W	40 V	1.3 V	0.6 mA	-65 °C	200 °C

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

2N1131L | Datasheet