DMP1070U-7
ActiveDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
Deep-Dive with AI
Search across all available documentation for this part.
DMP1070U-7
ActiveDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP1070U-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.4 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 11.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 143 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 890 mW |
| Rds On (Max) @ Id, Vgs | 31 mOhm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DMP1070U (Not Recommended for New Design (NRND)) Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on))while maintaining superior switching performance, which makes the device ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources