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RN1102 - Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-416(SSM)

SSM3J35AFS,LF

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Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-416(SSM)

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RN1102 - Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-416(SSM)

SSM3J35AFS,LF

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-416(SSM)

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Description

General part information

SSM3J35AFS Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-416(SSM)

Technical Specifications

Parameters and characteristics for this part

SpecificationSSM3J35AFS,LF
Current - Continuous Drain (Id) (Ta)250 mA
Drain to Source Voltage (Vdss)20 V
FET TypeP-Channel
Input Capacitance (Ciss) (Max)42 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-416, SC-75
Package NameSSM
Power Dissipation (Max)150 mW
Rds On (Max)1.4 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max)1 V

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CAD

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