Specification	IPB70N04S3-07

Current - Continuous Drain (Id) (Tc)	80 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	40 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2700 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3-2
Power Dissipation (Max)	79 W
Qualification	AEC-Q101
Rds On (Max)	6.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IPB70N Series

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Grade	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	FET Type	Input Capacitance (Ciss) (Max)	Package Name	Mounting Type	Qualification	Technology	Package / Case	Vgs(th) (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
INFINEON IPB70N12S3L12ATMA1	120 V	10 V	4.5 V	Automotive	125 W	-55 °C	175 °C	12.1 mOhm	70 A	77 nC	N-Channel	5550 pF	PG-TO263-3-2	Surface Mount	AEC-Q101	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.4 V	20 V
INFINEON IPB70N04S3-07	40 V			Automotive	79 W	-55 °C	175 °C	6.2 mOhm	80 A	40 nC	N-Channel	2700 pF	PG-TO263-3-2	Surface Mount	AEC-Q101	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	20 V	10 V

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