Specification	SQA410EJ-T1_GE3

Current - Continuous Drain (Id) (Tc)	7.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	485 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6 Single
Power Dissipation (Max)	13.6 W
Qualification	AEC-Q101
Rds On (Max)	28 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1.1 V

SQA410 Series

Part	Rds On (Max)	Mounting Type	Vgs(th) (Max)	Grade	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Qualification	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	FET Type	Technology	Drain to Source Voltage (Vdss)
Vishay Dale SQA410EJ-T1_GE3	28 mOhm	Surface Mount	1.1 V	Automotive	13.6 W	7.8 A	AEC-Q101	-55 °C	175 °C	PowerPAK® SC-70-6	PowerPAK® SC-70-6 Single	4.5 V	1.8 V	8 V	8 nC	485 pF	N-Channel	MOSFET (Metal Oxide)	20 V

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