Specification	IPD30N03S4L09ATMA1

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1520 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3-11
Power Dissipation (Max)	42 W
Qualification	AEC-Q101
Rds On (Max)	9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	2.2 V

IPD30N03 Series

Part	Current - Continuous Drain (Id) (Tc)	Grade	Package Name	Gate Charge (Max)	Technology	Vgs(th) (Max)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Rds On (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Qualification
INFINEON IPD30N03S2L10ATMA1	30 A	Automotive	PG-TO252-3-11	42 nC	MOSFET (Metal Oxide)	2 V	100 W	10 V	4.5 V	N-Channel	10 mOhm	Surface Mount	1200 pF	30 V	20 V	-55 °C	175 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101
INFINEON IPD30N03S4L09ATMA1	30 A	Automotive	PG-TO252-3-11	20 nC	MOSFET (Metal Oxide)	2.2 V	42 W	10 V	4.5 V	N-Channel	9 mOhm	Surface Mount	1520 pF	30 V	16 V	-55 °C	175 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101
INFINEON IPD30N03S2L20ATMA1	30 A	Automotive	PG-TO252-3-11	19 nC	MOSFET (Metal Oxide)	2 V	60 W	10 V	4.5 V	N-Channel	20 mOhm	Surface Mount	530 pF	30 V	20 V	-55 °C	175 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101

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