Specification	SI7450DP-T1-GE3

Current - Continuous Drain (Id) (Ta)	3.2 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	42 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max)	80 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

SI7450 Series

Part	Package Name	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Mounting Type	Gate Charge (Max)	Vgs(th) (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Package / Case	FET Type	Power Dissipation (Max)	Vgs (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SI7450DP-T1-E3	PowerPAK® SO-8	200 V	6 V	10 V	Surface Mount	42 nC	4.5 V	80 mOhm	3.2 A	PowerPAK® SO-8	N-Channel	1.9 W	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C
Vishay Dale SI7450DP-T1-RE3									3.2 A								19.8 A
Vishay Dale SI7450DP-T1-GE3	PowerPAK® SO-8	200 V	6 V	10 V	Surface Mount	42 nC	4.5 V	80 mOhm	3.2 A	PowerPAK® SO-8	N-Channel	1.9 W	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C

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