Specification	IPP80R1K2P7XKSA1

Current - Continuous Drain (Id) (Tc)	4.5 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	11 nC
Input Capacitance (Ciss) (Max)	300 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	PG-TO220-3
Power Dissipation (Max)	37 W
Rds On (Max)	1.2 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPP80R1 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Package / Case	Current - Continuous Drain (Id) (Tc)	Package Name	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max)	Technology	Mounting Type
INFINEON IPP80R1K4P7XKSA1	-55 °C	150 °C	N-Channel	TO-220-3	4 A	PG-TO220-3	3.5 V	250 pF	800 V	10 nC	32 W	10 V	20 V	1.4 Ohm	MOSFET (Metal Oxide)	Through Hole
INFINEON IPP80R1K2P7XKSA1	-55 °C	150 °C	N-Channel	TO-220-3	4.5 A	PG-TO220-3	3.5 V	300 pF	800 V	11 nC	37 W	10 V	20 V	1.2 Ohm	MOSFET (Metal Oxide)	Through Hole

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