2N4931
Active250 V POWER BJT TO-39 ROHS COMPLIANT: YES
2N4931
Active250 V POWER BJT TO-39 ROHS COMPLIANT: YES
Description
General part information
2N4931-Transistor Series
This specification covers the performance requirements for PNP, silicon, high-voltage 2N3743, 2N4930 and 2N4931 transistor. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/397. Two levels of product assurance (JANHC and JANKC) for die are provided for each unencapsulated device. The device package outlines are as follows: TO-39 , and surfacemount U4 package for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/397.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N4931 |
|---|---|
| Current - Collector (Ic) (Max) | 0.2 mA |
| Current - Collector Cutoff (Max) | 250 nA |
| DC Current Gain (hFE) (Min) | 50 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Package Name | TO-39 |
| Power - Max | 1 VA |
| Transistor Type | PNP |
| Vce Saturation (Max) | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
Pricing
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