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Description

General part information

D965 Series

Bipolar (BJT) Transistor NPN 22 V 5 A 750 mW Through Hole TO-92

Technical Specifications

Parameters and characteristics for this part

SpecificationD965-R-BP
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)340
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Package NameTO-92
Power - Max750 mW
Transistor TypeNPN
Vce Saturation (Max)350 mV
Voltage - Collector Emitter Breakdown (Max)22 V

Pricing

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