IRLR2905TRPBF

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Infineon Technologies

MOSFET, N-CH, 55V, 42A, TO-252AA ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, N-CH, 55V, 42A, TO-252AA ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IRLR2905TRPBF

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs
Infineon Technologies IRLR2905TRPBF	TO-252AA (DPAK)	-55 °C	175 ░C	48 nC	42 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	MOSFET (Metal Oxide)	55 V	Surface Mount	2 V	4 V	10 V	16 V	1700 pF	110 W	27 mOhm

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General part information

N-Channel 55 V 42A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources