Technical Specifications
Parameters and characteristics for this part
| Specification | STP15N65M5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs | 340 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP15N65M5 Series
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Documents
Technical documentation and resources
Datasheet
DatasheetDatasheet
DatasheetFlyers (5 of 7)
TN1156
Technical Notes & ArticlesUM1575
User ManualsFlyers (5 of 7)
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TN1378
Technical Notes & ArticlesDS8919
Product SpecificationsFlyers (5 of 7)
AN4250
Application NotesTN1224
Technical Notes & ArticlesAN2842
Application NotesAN4337
Application NotesAN2344
Application NotesAN4829
Application NotesTN1225
Technical Notes & ArticlesFlyers (5 of 7)
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