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STP15N65M5 - STMicroelectronics-ACST830-8T TRIACs TRIAC 800V 84A 3-Pin(3+Tab) TO-220AB Tube

STP15N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 0.308 OHM TYP., 11 A MDMESH M5 POWER MOSFET IN TO-220 PACKAGE

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STP15N65M5 - STMicroelectronics-ACST830-8T TRIACs TRIAC 800V 84A 3-Pin(3+Tab) TO-220AB Tube

STP15N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 0.308 OHM TYP., 11 A MDMESH M5 POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP15N65M5
Current - Continuous Drain (Id) @ 25°C11 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]22 nC
Input Capacitance (Ciss) (Max) @ Vds810 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Power Dissipation (Max)125 W
Rds On (Max) @ Id, Vgs340 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.14
50$ 1.57
100$ 1.41
500$ 1.15
1000$ 1.06
2000$ 0.99
5000$ 0.97
LCSCPiece 1$ 2.49
10$ 2.13
50$ 1.91
100$ 1.68
500$ 1.57
1000$ 1.53
2000$ 1.51
4000$ 1.50

Description

General part information

STP15N65M5 Series

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.