PMV75UP,215

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Nexperia USA Inc.

20 V, P-CHANNEL TRENCH MOSFET

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PMV75UP,215

Active

Nexperia USA Inc.

20 V, P-CHANNEL TRENCH MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMV75 Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMV75UP,215

Current - Continuous Drain (Id) (Ta)	2.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	7.5 nC
Input Capacitance (Ciss) (Max)	550 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	TO-236AB
Power Dissipation (Max)	490 mW, 5 W
Rds On (Max)	102 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	900 mV

PMV75 Series

Part	Vgs (Max)	Technology	Rds On (Max)	Drain to Source Voltage (Vdss)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Package / Case	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	FET Type	Gate Charge (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)
Nexperia USA Inc. PMV75UP,215	12 V	MOSFET (Metal Oxide)	102 mOhm	20 V	TO-236AB	-55 °C	150 °C	2.5 A	SC-59 SOT-23-3 TO-236-3	900 mV	550 pF	P-Channel	7.5 nC	Surface Mount	4.5 V	1.8 V	5 W 490 mW