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CY62157EV30LL-45ZXIT

CY62157EV30LL-45ZXIT

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INFINEON

SRAM, ASYNCHRONOUS SRAM, 8 MBIT, 512K X 16BIT, TSOP, 48 PINS, 2.2 V

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CY62157EV30LL-45ZXIT

CY62157EV30LL-45ZXIT

Active
INFINEON

SRAM, ASYNCHRONOUS SRAM, 8 MBIT, 512K X 16BIT, TSOP, 48 PINS, 2.2 V

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Description

General part information

CY62157EV30LL Series

CY62157EV30LL-45ZXIT is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features an advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (active low CE1 HIGH or CE2 LOW or both active low BHE and active low BLE are HIGH). The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (active low CE1HIGH or CE2 LOW), the outputs are disabled (active low OE HIGH), Byte High Enable and Byte Low Enable are disabled (active low BHE, active low BLE HIGH), or a write operation is active (active low CE1 LOW, CE2 HIGH and WE LOW).

Technical Specifications

Parameters and characteristics for this part

SpecificationCY62157EV30LL-45ZXIT
Access Time45 ns
Memory Depth512 K
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size1 MB
Memory TypeVolatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length0.724 "
Package Name48-TSOP I, 48-TFSOP
Package Width18.4 mm
TechnologySRAM - Asynchronous
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.2 V
Write Cycle Time - Page45 ns
Write Cycle Time - Word45 ns

Pricing

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