Specification	SI8425DB-T1-E1

Current - Continuous Drain (Id) (Ta)	5.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	110 nC
Input Capacitance (Ciss) (Max)	2800 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	4-UFBGA, WLCSP
Package Length	1.6 mm
Package Name	4-WLCSP
Package Width	1.6 mm
Power Dissipation (Max)	2.7 W, 1.1 W
Rds On (Max)	23 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	900 mV

SI8425 Series

Part	Package Name	Package Width	Package Length	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Gate Charge (Max)	Mounting Type	FET Type	Vgs (Max)	Vgs(th) (Max)
Vishay Dale SI8425DB-T1-E1	4-WLCSP	1.6 mm	1.6 mm	20 V	MOSFET (Metal Oxide)	4.5 V	1.8 V	1.1 W 2.7 W	5.9 A	2800 pF	4-UFBGA WLCSP	-55 °C	150 °C	23 mOhm	110 nC	Surface Mount	P-Channel	10 V	900 mV

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