2N5339P
ActivePOWER BJT TO-39 ROHS COMPLIANT: YES
2N5339P
ActivePOWER BJT TO-39 ROHS COMPLIANT: YES
Description
General part information
2N5339P-Transistor-PIND Series
This specification covers the performance requirements for NPN silicon switching, 2N5339 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/560 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/560. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device type are as follows: Three terminal round metal can modified TO-205-AD (formerly similar to TO-39) and surface mount version (2N5339U3 surface mount versions). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/560.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5339P |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) | 100 µA |
| DC Current Gain (hFE) (Min) | 60 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Package Name | TO-39 (TO-205AD) |
| Power - Max | 1 VA |
| Transistor Type | NPN |
| Vce Saturation (Max) | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
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