
MJPE32C-QZ
ActiveNexperia USA Inc.
100 V, 3 A PNP HIGH POWER BIPOLAR TRANSISTOR

MJPE32C-QZ
ActiveNexperia USA Inc.
100 V, 3 A PNP HIGH POWER BIPOLAR TRANSISTOR
Description
General part information
MJPE32C-Q Series
PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJPE32C-QZ |
|---|---|
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 1 µA |
| DC Current Gain (hFE) (Min) | 25 |
| Frequency - Transition | 105 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | TO-277, 3-PowerDFN |
| Package Name | CFP15B |
| Power - Max | 1.6 W |
| Qualification | AEC-Q101 |
| Transistor Type | PNP |
| Vce Saturation (Max) | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Evaluation of junction temperature and thermal stacks using the virtual junction
Reflow soldering profile
Wave soldering profile
plastic, thermal enhanced ultra thin SMD package; 3leads; 2.13 mm pitch; 5.8 x 4.3 x 0.95 mm body
RS2624_CFP15BSide
CFP15B; Reel pack for SMD, 13"; Q4/T2 product orientation