Specification	SIDR638DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	204 nC
Input Capacitance (Ciss) (Max)	10500 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8DC
Power Dissipation (Max)	125 W
Rds On (Max)	0.88 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.3 V

SIDR638 Series

Part	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Rds On (Max)	Mounting Type	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Package Name
Vishay Dale SIDR638DP-T1-GE3	10500 pF	10 V	4.5 V	N-Channel	PowerPAK® SO-8	40 V	2.3 V	-16 V	20 V	0.88 mOhm	Surface Mount	MOSFET (Metal Oxide)	-55 °C	150 °C	125 W	204 nC	100 A	PowerPAK® SO-8DC

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