Specification	SI3440ADV-T1-GE3

Current - Continuous Drain (Id) (Tc)	2.2 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	4 nC
Input Capacitance (Ciss) (Max)	80 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	3.6 W
Rds On (Max)	380 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SI3440 Series

Part	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Technology	Package Name	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Mounting Type	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI3440ADV-T1-GE3	2.2 A	20 V	MOSFET (Metal Oxide)	6-TSOP	380 mOhm	-55 °C	150 °C	4 V	3.6 W	Surface Mount	4 nC	80 pF	SOT-23-6 Thin TSOT-23-6	10 V	7.5 V	150 V	N-Channel
Vishay Dale SI3440DV-T1-E3		20 V	MOSFET (Metal Oxide)	6-TSOP	375 mOhm	-55 °C	150 °C	4 V	1.14 W	Surface Mount	8 nC		SOT-23-6 Thin TSOT-23-6	10 V	6 V	150 V	N-Channel	1.2 A

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