Specification	SI4403DDY-T1-GE3

Current - Continuous Drain (Id) (Tc)	15.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	99 nC
Input Capacitance (Ciss) (Max)	3250 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	5 W
Rds On (Max)	14 mOhm, 14 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SI4403 Series

Part	Vgs (Max)	Gate Charge (Max)	Package Name	Power Dissipation (Max)	FET Type	Mounting Type	Package Length	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)
Vishay Dale SI4403BDY-T1-E3	8 V	50 nC	8-SOIC	1.35 W	P-Channel	Surface Mount	0.154 in	3.9 mm	-55 °C	150 °C	MOSFET (Metal Oxide)	7.3 A	20 V	1 V	4.5 V	1.8 V	17 mOhm
Vishay Dale SI4403DDY-T1-GE3	8 V	99 nC	8-SOIC	5 W	P-Channel	Surface Mount	0.154 in	3.9 mm	-55 °C	150 °C	MOSFET (Metal Oxide)		20 V	1 V	4.5 V	1.8 V	14 mOhm 14 mOhm	15.4 A	3250 pF
Vishay Dale SI4403BDY-T1-GE3	8 V	50 nC	8-SOIC	1.35 W	P-Channel	Surface Mount	0.154 in	3.9 mm	-55 °C	150 °C	MOSFET (Metal Oxide)	7.3 A	20 V	1 V	4.5 V	1.8 V	17 mOhm

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