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Description

General part information

SLA60 Series

Bipolar (BJT) Transistor Array 3 NPN, 3 PNP Darlington (3-Phase Bridge) 60V 4A 5W, 25W Through Hole 12-SIP

Technical Specifications

Parameters and characteristics for this part

SpecificationSLA6012
Current - Collector (Ic) (Max)4 A
Current - Collector Cutoff (Max)10 µA
DC Current Gain (hFE) (Min)2000
Mounting TypeThrough Hole
NPN Count3
Operating Temperature150 °C
Package / Case12-SIP Exposed Tab
Package Name12-SIP
PNP Count3
Power - Max (Value 1)5 W
Power - Max (Value 2)25 W
Transistor Configuration3-Phase Bridge, Darlington
Transistor TypeNPN, PNP
Vce Saturation (Max)1.5 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

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