Specification	JAN2N4261

Current - Collector (Ic) (Max)	0.03 mA
Current - Collector Cutoff (Max)	10 µA
DC Current Gain (hFE) (Min)	30
Grade	Military
Mounting Type	Through Hole
Operating Temperature (Max)	200 °C
Operating Temperature (Min)	-65 °C
Package / Case	TO-72-3 Metal Can
Package Name	TO-72
Power - Max	200 mW
Qualification	511, MIL-PRF-19500
Transistor Type	PNP
Vce Saturation (Max)	350 mV, 350 mV
Voltage - Collector Emitter Breakdown (Max)	15 V

2N4261 Series

Part	Current - Collector Cutoff (Max)	Mounting Type	Current - Collector (Ic) (Max)	Grade	Qualification	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	DC Current Gain (hFE) (Min)	Voltage - Collector Emitter Breakdown (Max)	Package Name	Vce Saturation (Max)	Transistor Type	Power - Max
Microchip Technology JANTX2N4261	10 µA	Through Hole	0.03 mA	Military	511 MIL-PRF-19500	TO-72-3 Metal Can	-65 °C	200 °C	30	15 V	TO-72	350 mV 350 mV	PNP	200 mW
Microchip Technology JAN2N4261	10 µA	Through Hole	0.03 mA	Military	511 MIL-PRF-19500	TO-72-3 Metal Can	-65 °C	200 °C	30	15 V	TO-72	350 mV 350 mV	PNP	200 mW
Microchip Technology JANTXV2N4261	10 µA	Through Hole	0.03 mA	Military	511 MIL-PRF-19500	TO-72-3 Metal Can	-65 °C	200 °C	30	15 V	TO-72	350 mV 350 mV	PNP	200 mW
Microchip Technology 2N4261UB	10 µA	Surface Mount	0.03 mA			3-SMD No Lead	-65 °C	200 °C	30	15 V	UB	350 mV 350 mV	PNP	200 mW
Microchip Technology JAN2N4261UB	10 µA	Surface Mount	0.03 mA	Military	511 MIL-PRF-19500	3-SMD No Lead	-65 °C	200 °C	30	15 V	UB	350 mV 350 mV	PNP	200 mW

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