TK13A45D(STA4,Q,M)

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Toshiba Semiconductor and Storage

MOSFET N-CH 450V 13A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 450V 13A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK13A45D(STA4,Q,M)

Current - Continuous Drain (Id) @ 25C	13 A
Drain to Source Voltage (Vdss)	450 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1350 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs [Max]	460 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	30 V

Part	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25C	Operating Temperature	Package / Case	Technology	FET Type	Rds On (Max) @ Id, Vgs [Max]	Mounting Type
Toshiba Semiconductor and Storage TK13A45D(STA4,Q,M)	30 V	450 V	25 nC	10 V	45 W	TO-220SIS	1350 pF	13 A	150 °C	TO-220-3 Full Pack	MOSFET (Metal Oxide)	N-Channel	460 mOhm	Through Hole

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General part information

N-Channel 450 V 13A (Ta) 45W (Tc) Through Hole TO-220SIS

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