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Description

General part information

UNR51 Series

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 80 mA 80 MHz 150 mW Surface Mount SMini3-F2

Technical Specifications

Parameters and characteristics for this part

SpecificationUNR51AMG0L
Current - Collector (Ic) (Max)0.08 A
Current - Collector Cutoff (Max)500 nA
DC Current Gain (hFE) (Min)80
Frequency - Transition80 MHz
Mounting TypeSurface Mount
Package / CaseSC-85
Package NameSMini3-F2
Power - Max150 mW
Resistor - Base (R1) Resistance2.2 kOhm
Resistor - Emitter Base (R2)47 kOhm
Resistors IncludedR1, R2
Transistor TypePre-Biased, PNP
Vce Saturation (Max)250 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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CAD

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