IXGR24N120C3D1

Active

IXYS

TRANSISTOR: IGBT; GENX3™; 1.2KV; 24A; 200W; PLUS247™

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Active

IXYS

TRANSISTOR: IGBT; GENX3™; 1.2KV; 24A; 200W; PLUS247™

Technical Specifications

Parameters and characteristics for this part

Specification	IXGR24N120C3D1

Current - Collector Pulsed (Icm)	96 A
Gate Charge	79 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	200 W
Reverse Recovery Time (trr)	220 ns
Supplier Device Package	ISOPLUS247™
Switching Energy	470 µJ, 1.37 mJ
Td (on/off) @ 25°C	93 ns, 16 ns
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Gate Charge	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Switching Energy	Current - Collector Pulsed (Icm)	Package / Case	Supplier Device Package	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vce(on) (Max) @ Vge, Ic	Mounting Type	IGBT Type	Reverse Recovery Time (trr)
IXYS IXGR24N60C	55 nC	42 A	80 W	240 µJ	80 A	TO-247-3	ISOPLUS247™	75 ns	15 ns	15 V 18 Ohm 24 A 480 V	600 V	150 °C	-40 °C	2.5 V	Through Hole
IXYS IXGR24N120C3D1	79 nC		200 W	1.37 mJ 470 µJ	96 A	TO-247-3	ISOPLUS247™		16 ns 93 ns		1200 V	150 °C	-55 °C		Through Hole	PT	220 ns
IXYS IXGR24N60CD1	55 nC	42 A	80 W	240 µJ	80 A	TO-247-3	ISOPLUS247™	75 ns	15 ns	15 V 18 Ohm 24 A 480 V	600 V	150 °C	-55 °C	2.5 V	Through Hole		25 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 1200 V 48 A 200 W Through Hole ISOPLUS247™

Technical documentation and resources

No documents available