1N1190

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GeneSiC Semiconductor

DIODE SWITCHING 600V 35A 2-PIN DO-5

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GeneSiC Semiconductor

DIODE SWITCHING 600V 35A 2-PIN DO-5

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	1N1190	1N1190 Series

Current - Average Rectified (Io)	35 A	35 - 40 A
Current - Reverse Leakage @ Vr	10 µA	10 µA
Mounting Type	Chassis, Stud Mount	Chassis, Stud Mount
Operating Temperature - Junction [Max]	190 °C	190 °C
Operating Temperature - Junction [Min]	-65 C	-65 C
Package / Case	DO-203AB, DO-5, Stud	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns	Standard Recovery >500ns
Speed	200 mA	200 mA
Supplier Device Package	DO-5	DO-5
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V	600 V
Voltage - Forward (Vf) (Max) @ If	-	1.1 V

DIODE GEN PURP 600V 40A DO5

Part	Package / Case	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Average Rectified (Io)	Speed	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
GeneSiC Semiconductor 1N1190A	DO-203AB, DO-5, Stud	1.1 V	Standard	40 A	Standard Recovery >500ns	200 mA	10 µA	Chassis, Stud Mount	600 V	DO-5	190 °C	-65 C
GeneSiC Semiconductor 1N1190	DO-203AB, DO-5, Stud		Standard	35 A	Standard Recovery >500ns	200 mA	10 µA	Chassis, Stud Mount	600 V	DO-5	190 °C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 35A Chassis, Stud Mount DO-5

Technical documentation and resources