RN1108,LF(CT

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Technical Specifications

Parameters and characteristics for this part

Specification	RN1108,LF(CT

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Power - Max [Max]	100 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	SSM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Resistor - Base (R1)	Power - Max [Max]	Resistor - Emitter Base (R2)	Transistor Type
Toshiba Semiconductor and Storage RN1108,LF(CT	SSM	80	500 nA	Surface Mount	50 V	300 mV	SC-75 SOT-416	250 MHz	100 mA	22 kOhms	100 mW	47000 Ohms	NPN - Pre-Biased

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General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM

Technical documentation and resources