Specification	UPA2521T1H-T2-AT

Current - Continuous Drain (Id) (Ta)	8 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Max)	7.6 nC
Input Capacitance (Ciss) (Max)	780 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 8-SMD, Flat Lead
Package Name	8-VSOF
Power Dissipation (Max)	1 W
Rds On (Max)	16.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

UPA2521T1H Series

N-Channel Mos Field Effect Transistor For Switching

Part	Package / Case	FET Type	Rds On (Max)	Input Capacitance (Ciss) (Max)	Technology	Package Name	Power Dissipation (Max)	Gate Charge (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Operating Temperature	Mounting Type	Current - Continuous Drain (Id) (Ta)
Renesas Electronics Corporation UPA2521T1H-T1-AT	8-SMD Flat Lead Flat Leads	N-Channel	16.5 mOhm	780 pF	MOSFET (Metal Oxide)	8-VSOF	1 W	7.6 nC	2.5 V	30 V	150 °C	Surface Mount	8 A
Renesas Electronics Corporation UPA2521T1H-T2-AT	8-SMD Flat Lead Flat Leads	N-Channel	16.5 mOhm	780 pF	MOSFET (Metal Oxide)	8-VSOF	1 W	7.6 nC	2.5 V	30 V	150 °C	Surface Mount	8 A

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