IRF7506TR

Obsolete

Infineon Technologies

MOSFET 2P-CH 30V 1.7A MICRO8

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Obsolete

Infineon Technologies

MOSFET 2P-CH 30V 1.7A MICRO8

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7506TR

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	180 pF
Mounting Type	Surface Mount
Package / Case	8-MSOP, 8-TSSOP
Package / Case	3 mm
Package / Case [custom]	0.118 in
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs [Max]	270 mOhm
Supplier Device Package	Micro8™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power - Max [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Package / Case [custom]	Package / Case
Infineon Technologies IRF7506TR	Surface Mount	30 V	Logic Level Gate	11 nC	MOSFET (Metal Oxide)	1.25 W	Micro8™	1.7 A	180 pF	2 P-Channel	270 mOhm	1 V	8-MSOP 8-TSSOP	0.118 in	3 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$