Specification	RJK03B7DPA-00#J53

Current - Continuous Drain (Id) (Ta)	30 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Max)	11 nC
Input Capacitance (Ciss) (Max)	1670 pF
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Package Name	8-WPAK
Power Dissipation (Max)	30 W
Rds On (Max)	7.8 mOhm
Technology	MOSFET (Metal Oxide)

RJK03B7DPA Series

N Channel Power MOSFET

Part	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Max)	Mounting Type	Rds On (Max)	Package / Case	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	FET Type	Package Name	Operating Temperature
Renesas Electronics Corporation RJK03B7DPA-00#J53	30 V	MOSFET (Metal Oxide)	11 nC	Surface Mount	7.8 mOhm	8-PowerWDFN	30 A	1670 pF	30 W	N-Channel	8-WPAK
Renesas Electronics Corporation RJK03B7DPA-00#J5A	30 V	MOSFET (Metal Oxide)	11 nC	Surface Mount	7.8 mOhm	8-PowerWDFN	30 A	1670 pF	30 W	N-Channel	8-WPAK	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources