IGW75N60TFKSA1

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Infineon Technologies

THE IGW75N60T IS A 600 V, 75 A IGBT DISCRETE IN TO-247 PACKAGE

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IGW75N60TFKSA1

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Infineon Technologies

THE IGW75N60T IS A 600 V, 75 A IGBT DISCRETE IN TO-247 PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IGW75N60TFKSA1

Current - Collector (Ic) (Max) [Max]	150 A
Current - Collector Pulsed (Icm)	225 A
Gate Charge	470 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	428 W
Supplier Device Package	PG-TO247-3-1
Switching Energy	4.5 mJ
Td (on/off) @ 25°C	330 ns
Td (on/off) @ 25°C	33 ns
Test Condition	15 V, 400 V, 75 A, 5 Ohm
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

IGW75N60 Series

Part	Current - Collector (Ic) (Max) [Max]	Mounting Type	Power - Max [Max]	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	IGBT Type	Gate Charge
Infineon Technologies IGW75N60TFKSA1	150 A	Through Hole	428 W	4.5 mJ	-40 C	175 °C	5 Ohm 15 V 75 A 400 V	PG-TO247-3-1	2 V	600 V	TO-247-3	330 ns	33 ns	225 A	Trench Field Stop	470 nC
Infineon Technologies IGW75N60H3FKSA1	140 A	Through Hole	428 W	1.7 mJ 3 mJ	-40 C	175 °C	5.2 Ohm 15 V 75 A 400 V	PG-TO247-3	2.3 V	600 V	TO-247-3		31 ns 265 ns	225 A	Trench Field Stop	470 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.78
		30	$ 3.88
		120	$ 3.24
		510	$ 2.77
		1020	$ 2.73

Description

General part information

IGW75N60 Series

Hard-switching 600 V, 75 A singleTRENCHSTOP™ IGBT3in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Documents

Technical documentation and resources