R6003KND3TL1
NRNDRohm Semiconductor
600V 3A TO-252, HIGH-SPEED SWITCHING POWER MOSFET
R6003KND3TL1
NRNDRohm Semiconductor
600V 3A TO-252, HIGH-SPEED SWITCHING POWER MOSFET
Description
General part information
R6003 Series
R6003KND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Technical Specifications
Parameters and characteristics for this part
| Specification | R6003KND3TL1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 3 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 8 nC |
| Input Capacitance (Ciss) (Max) | 185 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 |
| Power Dissipation (Max) | 44 W |
| Rds On (Max) | 1.5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 5.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Reliability Test Result
What Is Thermal Design
Impedance Characteristics of Bypass Capacitor
Anti-Whisker formation - Transistors
Two-Resistor Model for Thermal Simulation
Calculation of Power Dissipation in Switching Circuit
Notes for Calculating Power Consumption:Static Operation
Package Dimensions
Types and Features of Transistors
List of Transistor Package Thermal Resistance
What is a Thermal Model? (Transistor)
Temperature derating method for Safe Operating Area (SOA)
R6003KND3 ESD Data
Notes for Temperature Measurement Using Thermocouples
Precautions When Measuring the Rear of the Package with a Thermocouple
Basics of Thermal Resistance and Heat Dissipation
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Method for Monitoring Switching Waveform
How to Use LTspice® Models
MOSFET Gate Drive Current Setting for Motor Driving
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
How to Create Symbols for PSpice Models
θ<sub>JA</sub> and Ψ<sub>JT</sub>
PCB Layout Thermal Design Guide
Part Explanation
About Export Regulations
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Judgment Criteria of Thermal Evaluation
Importance of Probe Calibration When Measuring Power: Deskew
About Flammability of Materials
Moisture Sensitivity Level - Transistors
R6003KND3 Data Sheet
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Condition of Soldering / Land Pattern Reference
Measurement Method and Usage of Thermal Resistance RthJC
How to Use the Thermal Resistance and Thermal Characteristics Parameters
TO-252_TL1 Taping Information
MOSFET Gate Resistor Setting for Motor Driving
Report of SVHC under REACH Regulation
Compliance of the RoHS directive
How to Use LTspice® Models: Tips for Improving Convergence
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Technical Data Sheet EN