TPD7107F,BXH

Active

Toshiba Semiconductor and Storage

IC GATE DRVR HIGH-SIDE 10WSON

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

IC GATE DRVR HIGH-SIDE 10WSON

Technical Specifications

Parameters and characteristics for this part

Specification	TPD7107F,BXH

Channel Type	Single
Current - Peak Output (Source, Sink)	5 mA
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [custom]	2.4 V
Logic Voltage - VIL, VIH [custom]	0.6 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	10-WFDFN Exposed Pad
Supplier Device Package	10-WSON (3x3)

Part	Gate Type	Channel Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Driven Configuration	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Input Type	Number of Drivers	Mounting Type	Supplier Device Package	Current - Peak Output (Source, Sink)
Toshiba Semiconductor and Storage TPD7107F,BXH	N-Channel MOSFET	Single	-40 °C	125 ¯C	10-WFDFN Exposed Pad	High-Side	2.4 V	0.6 V	Non-Inverting	1	Surface Mount	10-WSON (3x3)	5 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Side Gate Driver IC Non-Inverting 10-WSON (3x3)

Technical documentation and resources

No documents available