
2SC5359-O(Q)
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 230 V, 15 A, TO-3P(L)

2SC5359-O(Q)
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 230 V, 15 A, TO-3P(L)
Description
General part information
2SC5359 Series
Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 180 W Through Hole TO-3P(L)
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SC5359-O(Q) |
|---|---|
| Current - Collector (Ic) (Max) | 15 A |
| Current - Collector Cutoff (Max) | 5 µA |
| DC Current Gain (hFE) (Min) | 80 |
| Frequency - Transition | 30 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-3PL |
| Package Name | TO-3P(L) |
| Power - Max | 180 W |
| Supplier Device Package | TO-3P, L |
| Transistor Type | NPN |
| Vce Saturation (Max) | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 230 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
The terms used in data sheets:Bipolar Transistor Application Notes
Selection Guide Power Devices 2025 Rev1.0
Surface Mount Small Signal Transistor (BJT) Precautions for use
The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes
2SC5359 Data sheet/English
The thermal stability and thermal design:Bipolar Transistor Application Notes
The maximum ratings:Bipolar Transistor Application Notes
2SC5359 Data sheet/Japanese
Datasheet