2SC5359-O(Q)

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Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO3P

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Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5359-O(Q)

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Cutoff (Max) [Max]	5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	80
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3PL
Power - Max [Max]	180 W
Supplier Device Package	TO-3P(L)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	230 V

Part	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Package / Case
Toshiba Semiconductor and Storage 2SC5359-O(Q)	230 V	Through Hole	TO-3P(L)	80	NPN	5 µA	180 W	150 °C	15 A	30 MHz	3 V	TO-3PL

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General part information

Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 180 W Through Hole TO-3P(L)

Technical documentation and resources