IPP200N15N3GHKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 150V 50A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 150V 50A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP200N15N3GHKSA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	1820 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology
Infineon Technologies IPP200N15N3GHKSA1	50 A	4 V	TO-220-3	N-Channel	150 W	31 nC	1820 pF	Through Hole	-55 °C	175 ░C	8 V 10 V	20 mOhm	20 V	PG-TO220-3	150 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 50A (Tc) 150W (Tc) Through Hole PG-TO220-3

Technical documentation and resources