IXTU4N70X2
ActiveDISCMSFT NCHULTRAJNCTN X2CLASS TO-251D/ TUBE
IXTU4N70X2
ActiveDISCMSFT NCHULTRAJNCTN X2CLASS TO-251D/ TUBE
Description
General part information
IXTU4N70X2 Series
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTU4N70X2 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 4 A |
| Drain to Source Voltage (Vdss) | 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 11.8 nC, 11.8 nC |
| Input Capacitance (Ciss) (Max) | 386 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Package Name | TO-251-3 |
| Power Dissipation (Max) | 80 W |
| Rds On (Max) | 850 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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