DLA60I1200HA

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IXYS

DIODE GEN PURP 1.2KV 60A TO247AD

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IXYS

DIODE GEN PURP 1.2KV 60A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	DLA60I1200HA

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.19 V

DIODE GEN PURP 1.2KV 60A TO247AD

Part	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Package / Case
IXYS DLA60I1200HA	30 µA	175 ░C	-55 C	TO-247AD	Standard Recovery >500ns	200 mA	1.2 kV	Standard	60 A	Through Hole	1.19 V	TO-247-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 60A Through Hole TO-247AD

Technical documentation and resources