STO36N60M6

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STMicroelectronics

N-CHANNEL 600 V, 85 MOHM TYP., 30 A MDMESH M6 POWER MOSFET IN A TO-LL PACKAGE

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STO36N60M6

Active

STMicroelectronics

N-CHANNEL 600 V, 85 MOHM TYP., 30 A MDMESH M6 POWER MOSFET IN A TO-LL PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STO36N60M6

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1960 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	99 mOhm
Supplier Device Package	TOLL (HV)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STO36N60M6 Series

N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-LL package

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Vgs (Max)	Technology	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STO36N60M6	44.3 nC	10 V	99 mOhm	TOLL (HV)	600 V	Surface Mount	4.75 V	30 A	-55 °C	150 °C	230 W	25 V	MOSFET (Metal Oxide)	8-PowerSFN	N-Channel	1960 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 5.31
		10	$ 4.46
		100	$ 3.60
		500	$ 3.20
	Digi-Reel®	1	$ 5.31
		10	$ 4.46
		100	$ 3.60
		500	$ 3.20
	Tape & Reel (TR)	1800	$ 2.48

Description

General part information

STO36N60M6 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

Technical documentation and resources

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