STP4NK80Z
ActiveN-CHANNEL 800 V, 2.7 OHM TYP., 3 A SUPERMESH POWER MOSFET IN A TO-220 PACKAGE
STP4NK80Z
ActiveN-CHANNEL 800 V, 2.7 OHM TYP., 3 A SUPERMESH POWER MOSFET IN A TO-220 PACKAGE
Description
General part information
STP4NK80Z Series
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | STP4NK80Z |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 3 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 22.5 nC |
| Input Capacitance (Ciss) (Max) | 575 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power Dissipation (Max) | 80 W |
| Rds On (Max) | 3.5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
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