Specification	SP8M7FU6TB

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	7 A
Current - Continuous Drain (Id) (Typical)	5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	5.5 nC
Input Capacitance (Ciss) (Max)	230 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package Length	0.154 in
Package Name	8-SOIC, 8-SOP
Package Width	3.9 mm
Power - Max	2 VA
Rds On (Max)	51 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

SP8M7 Series

Part	Gate Charge (Max)	Rds On (Max)	Package Length	Package Name	Package Width	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)	Operating Temperature	Power - Max	Vgs(th) (Max)	Technology	Mounting Type	Drain to Source Voltage (Vdss)	FET Feature	Configuration
Rohm Semiconductor SP8M7FU6TB	5.5 nC	51 mOhm	0.154 in	8-SOIC 8-SOP	3.9 mm	230 pF	7 A	5 A	150 °C	2 VA	2.5 V	MOSFET (Metal Oxide)	Surface Mount	30 V	Logic Level Gate	N P-Channel

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